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3N100E Hoja de datos - Motorola => Freescale

Número de piezaDescripción (Función)Fabricante
3N100E TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM Motorola
Motorola => Freescale Motorola
3N100E Datasheet PDF : 3N100E pdf   
MTP3N100E image

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

• Robust High Voltage Termination
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature

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