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APT1001RSVR Datasheet PDF - Advanced Power Technology

Número de pieza
componentes Descripción
Fabricante
APT1001RSVR
APT
Advanced Power Technology  APT
Other PDF
  no available.
PDF
APT1001RSVR Datasheet PDF : APT1001RSVR pdf     
APT1001RSVR image

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Surface Mount D3PAK Package

 

Número de pieza
componentes Descripción
PDF
Fabricante
SILICON N & P CHNAAEL MOS TYPE POWER MOS FET MODULE
Ver
Toshiba
MOS FIELD EFFECT TRANSISTOR / SWITCHING N-CHANNEL POWER MOS FET
Ver
Renesas Electronics
MOS FIELD EFFECT TRANSISTOR / SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Ver
NEC => Renesas Technology
MOS FIELD EFFECT TRANSISTOR / SWITCHING N-CHANNEL POWER MOS FET
Ver
NEC => Renesas Technology
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
Ver
Toshiba
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE(MOS FIELD EFFECT TRANSISTOR)
Ver
NEC => Renesas Technology
TRANSISTOR SILICON N CHANNEL MOS TYPE(π-MOS)
Ver
Unspecified
MOSFETs Silicon N-Channel MOS (U-MOS VII-H)
Ver
Toshiba
MOSFETs Silicon N-channel MOS (U-MOS-H)
Ver
Toshiba
MOSFETs Silicon N-channel MOS (U-MOS IV)
Ver
Toshiba

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