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FQP11N50CF Datasheet PDF - Fairchild Semiconductor

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componentes Descripción
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FQP11N50CF
Fairchild
Fairchild Semiconductor Fairchild
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FQP11N50CF Datasheet PDF : FQP11N50CF pdf     
FQPF11N50CF image

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features
• 11A, 500V, RDS(on) = 0.55Ω @VGS = 10 V
• Low Gate Charge (typical 43 nC)
• Low Crss (typical 20pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• Fast Recovery Body Diode (typical 90ns)

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