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IRF9510 Hoja de datos - Intersil

Número de piezaDescripción (Función)Fabricante
IRF9510 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET Intersil
Intersil Intersil
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IRF9510 Ficha de datos PDF : IRF9510 pdf   
IRF9510 image

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 3.0A, 100V
• rDS(ON) = 1.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

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