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LET21004 Datasheet PDF - STMicroelectronics

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LET21004 Datasheet PDF : LET21004 pdf     
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DESCRIPTION
The LET21004 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2.1 GHz. LET21004 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. LET21004’s superior linearity performance makes it an ideal solution for base station applications.

Designed for GSM / EDGE / IS-97 / WCDMA applications

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 4 W with 11 dB gain @ 2170 MHz / 26 V
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTION

 

Número de pieza
componentes Descripción
PDF
Fabricante
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz
Ver
Infineon Technologies
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz
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SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Ver
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Ver
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Ver
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Ver
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Ver
Polyfet RF Devices

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