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NP100P06PLG Datasheet PDF - Renesas Electronics

Número de pieza
componentes Descripción
Fabricante
NP100P06PLG
Renesas
Renesas Electronics Renesas
Other PDF
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PDF
NP100P06PLG Datasheet PDF : NP100P06PLG pdf     
NP100P06PLG image

DESCRIPTION
The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES
• Super low on-state resistance
    RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A)
    RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A)
• High current rating: ID(DC) = m100 A
• Built-in gate protection diode

 

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