DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
FEATURES
• Channel Temperature 175 degree rated
• Super Low on-state Resistance
RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A)
RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A)
• Low input capacitance Ciss = 2600 pF TYP.
• Built-in gate protection diode
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