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Número de pieza(s) : 2N6796
Intersil
Intersil
componentes Descripción : 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET

8A, 100V, 0.180 Ohm, N-Channel Power MOSFET

The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.

Features
• 8A, 100V
• rDS(ON) = 0.180Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
    - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Número de pieza(s) : BUZ72A
Intersil
Intersil
componentes Descripción : 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET

9A, 100V, 0.250 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.

Features
• 9A, 100V
• rDS(ON) = 0.250Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
  -TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

 

Número de pieza(s) : IRF510
Intersil
Intersil
componentes Descripción : 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 5.6A, 100V
•rDS(ON)= 0.540Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Número de pieza(s) : AM2370N
ANALOGPOWER
Analog Power
componentes Descripción : N-Channel 100V (D-S) MOSFET

N-Channel 100V (D-S) MOSFET

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

• Low rDS(on) provides higher efficiency and extends battery life
• Low thermal impedance copper leadframe SOT-23 saves board space
• Fast switching speed
• High performance trench technology

Número de pieza(s) : JANSR2N7292
Intersil
Intersil
componentes Descripción : 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET

Description
The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

Features
• 25A, 100V, rDS(ON) = 0.070Ω
• Total Dose
    - Meets Pre-RAD Specifications to 100K RAD (Si)
• Dose Rate
    - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
    - Typically Survives 2E12 if Current Limited to IDM
• Photo Current
    - 7.0nA Per-RAD(Si)/s Typically
• Neutron
    - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2
    - Usable to 3E14 Neutrons/cm2

Número de pieza(s) : IRF140
Intersil
Intersil
componentes Descripción : 28A, 100V, 0.077 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 28A, 100V
• rDS(ON) = 0.077Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device

Número de pieza(s) : 2N6788L
Semelab
Semelab - > TT Electronics plc
componentes Descripción : N-Channel MOSFET in a Hermetically sealed TO39 Metal Package

N-Channel MOSFET in a Hermetically sealed TO39 Metal Package.

N-Channel MOSFET.
    VDSS = 100V
    ID = 4.5A
    RDS(ON) = 0.3Ω

Número de pieza(s) : IRFF110
Semelab
Semelab - > TT Electronics plc
componentes Descripción : N-Channel MOSFET in a Hermetically sealed TO39 Metal Package

N-Channel MOSFET in a Hermetically sealed TO39 Metal Package.

N-Channel MOSFET.
    VDSS = 100V
    ID = 3.5A
    RDS(ON) = 0.6Ω

Número de pieza(s) : IRFD110
Intersil
Intersil
componentes Descripción : 1A, 100V, 0.600 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 1A, 100V
• rDS(ON) = 0.600Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Número de pieza(s) : IRF130
Intersil
Intersil
componentes Descripción : 14A, 100V, 0.160 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 14A, 100V
• rDS(ON) = 0.160Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount
      Components to PC Boards”

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