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Sharp
Sharp Electronics
componentes Descripción : 16-MBIT(2MBx8/MBx16)SMART 5 Flash MEMORY

16-MBIT(2MBx8/MBx16)SMART 5 Flash MEMORY

Número de pieza(s) : DA28F320S5-120
Intel
Intel
componentes Descripción : WORD-WIDE FlashFileMEMORY FAMILY

Intel’s Word-Wide FlashFileMEMORY FAMILY provides high-density, low-cost, nonvolatile, read/write storage solutions for a wide range of applications. The word-wide memories are available at various densities in the same package type. Their symmetrically-blocked architecture, voltage, AND extended cycling provide highly flexible components suitable for resident flash arrays, SIMMs, AND MEMORY cards. Enhanced suspend capabilities provide an ideal solution for code or data storage applications.

■ Two 32-Byte Write Buffers
    - 2 µs per Byte Effective Programming Time
■ Operating Voltage
    - 5V VCC
    - 5V VPP
■ 70 ns Read Access Time (16 MBIT) 90 ns Read Access Time (32 MBIT)
■ High-Density Symmetrically-Blocked Architecture
    - 32 64-Kbyte Erase Blocks (16 MBIT)
    - 64 64-Kbyte Erase Blocks (32 MBIT)
■ System Performance Enhancements
    - STS Status Output
■ Industry-StANDard Packaging
    - SSOP AND TSOP (16 MBIT)
    - SSOP (32 MBIT)
■ Cross-Compatible CommAND Support
    - Intel StANDard CommAND Set
    - Common Flash Interface (CFI)
    - Scaleable CommAND Set (SCS)
■ 100,000 Block Erase Cycles
■ Enhanced Data Protection Features
    - Absolute Protection with VPP = GND
    - Flexible Block Locking
    - Block Erase/Program Lockout during Power Transitions
■ Configurable x8 or x16 I/O
■ Automation Suspend Options
    - Program Suspend to Read
    - Block Erase Suspend to Program
    - Block Erase Suspend to Read
■ ETOX™ V Nonvolatile Flash Technology

Número de pieza(s) : VS28F016SV MS28F016SV
Intel
Intel
componentes Descripción : 16-MBIT (1-MBIT x 16, 2-MBIT x 8) FlashFileMEMORY

Intel’s VS/MS28F016SV, 16-MBIT FlashFiIeTM MEMORY is the latest member of Intel’s high density, high performance MEMORY FAMILY for the Industrial, Special Environment, AND Military markets. Its user selectable VCC AND VPP (SMARTVoltage Technology), innovative capabilities, 100% compatibility with the VE28F008 AND M28F008, multiple power savings modes, selective block locking, AND very fast read/write performance make it the ideal choice for any applications that need a high density AND a wide temperature range MEMORY device. The VS/MS28F016SV is the ideal choice for designers who need to break free from the dependence on slow rotating media or battery backed up MEMORY arrays.
   
■ VS28F016SV
    — -40°C to +125°C
    — SE2 Grade
■ MS28F016SV
    — -55°C to +125°C
    — QML Certified
    — SE1 Grade
SMARTVoltage Technology
    — User-Selectable 3.3V or 5V VCC
    — User-Selectable 5V or 12V VPP
■ Three Voltage/Speed Options
    — 80 ns Access Time, 5.0V ±5%
    — 85 ns Access Time, 5.0V ±10%
    — 120 ns Access Time, 3.3V ±10%
■ 1 Million Erase Cycles per Block
    Typical
■ 14.3 MB/sec Burst Write Transfer Rate
■ Configurable x8 or x16 Operation
■ 56-Lead SSOP Plastic Package
■ Backwards-Compatible with VE28F008,
    M28F008 AND 28F016SA CommAND Set
■ Revolutionary Architecture
    — Multiple CommAND Execution
    — Write During Erase
    — CommAND Super-Set of the Intel
        VE28F008, M28F008
    — Page Buffer Write
■ Multiple Power Savings Modes
■ Two 256-Byte Page Buffers
■ State-of-the-Art 0.6 μm ETOX™ IV
    Flash Technology
   

Número de pieza(s) : LH28F016SUHT-10 LH28F016SUHT
Sharp
Sharp Electronics
componentes Descripción : 16 MBIT(1 MBIT x 16, 2 MBIT x 8) 5V Single Voltage Flash MEMORY

16 MBIT(1 MBIT x 16, 2 MBIT x 8) 5V Single Voltage Flash MEMORY

INTRODUCTION
The specifications intended to give an overview of the chip feature-set AND of the operating AC/DC specifications. Please refer to Users Manual also, to leam detail usage.

componentes Descripción : SMART 3 ADVANCED BOOT BLOCK WORD-WIDE 4-MBIT (256K X 16), 8-MBIT (512K X 16), 16-MBIT (1024K X 16) FLASH MEMORY FAMILY

INTRODUCTION
This preliminary datasheet contains the specifications for the Advanced Boot Block flash MEMORY FAMILY, which is optimized for low power, portable systems. This FAMILY of products features 1.8V–2.2V or 2.7V–3.6V I/Os AND a low VCC/VPP operating range of 2.7V–3.6V for read AND program/erase operations. In addition this FAMILY is capable of fast programming at 12V. Throughout this document, the term “2.7V” refers to the full voltage range 2.7V–3.6V (except where noted otherwise) AND “VPP = 12V” refers to 12V ±5%. Section 1 AND 2 provides an overview of the flash MEMORY FAMILY including applications, pinouts AND pin descriptions. Section 3 describes the MEMORY organization AND operation for these products. Finally, Sections 4, 5, 6 AND 7 contain the operating specifications.

■ Flexible SMARTVoltage Technology
    - 2.7V–3.6V Program/Erase
    - 2.7V–3.6V Read Operation
    - 12V VPP Fast Production Programming
■ 2.7V or 1.8V I/O Option
    - Reduces Overall System Power
■ Optimized Block Sizes
    - Eight 4-KW Blocks for Data, Top or Bottom Locations
    - Up to Thirty-One 32-KW Blocks for Code
■ High Performance
    - 2.7V–3.6V: 120 ns Max Access Time
■ Block Locking
    - VCC-Level Control through WP#
■ Low Power Consumption
    - 20 mA Maximum Read Current
■ Absolute Hardware-Protection
    - VPP = GND Option
    - VCC Lockout Voltage
■ Extended Temperature Operation
    - –40°C to +85°C
■ Supports Code Plus Data Storage
    - Optimized for FDI, Flash Data Integrator Software
    - Fast Program Suspend Capability
    - Fast Erase Suspend Capability
■ Extended Cycling Capability
    - 10,000 Block Erase Cycles
■ Automated Word Program AND Block Erase
    - CommAND User Interface
    - Status Registers
■ SRAM-Compatible Write Interface
■ Automatic Power Savings Feature
■ Reset/Deep Power-Down
    - 1 µA ICCTypical
    - Spurious Write Lockout
■ StANDard Surface Mount Packaging
    - 48-Ball µBGA* Package
    - 48-Lead TSOP Package
■ Footprint Upgradeable
    - Upgradeable from 2-, 4- AND 8-MBIT Boot Block
■ ETOX™ V (0.4 µ) Flash Technology

componentes Descripción : SMART 3 ADVANCED BOOT BLOCK WORD-WIDE 4-MBIT (256K X 16), 8-MBIT (512K X 16), 16-MBIT (1024K X 16) FLASH MEMORY FAMILY

INTRODUCTION
This preliminary datasheet contains the specifications for the Advanced Boot Block flash MEMORY FAMILY, which is optimized for low power, portable systems. This FAMILY of products features 1.8V–2.2V or 2.7V–3.6V I/Os AND a low VCC/VPP operating range of 2.7V–3.6V for read AND program/erase operations. In addition this FAMILY is capable of fast programming at 12V. Throughout this document, the term “2.7V” refers to the full voltage range 2.7V–3.6V (except where noted otherwise) AND “VPP = 12V” refers to 12V ±5%. Section 1 AND 2 provides an overview of the flash MEMORY FAMILY including applications, pinouts AND pin descriptions. Section 3 describes the MEMORY organization AND operation for these products. Finally, Sections 4, 5, 6 AND 7 contain the operating specifications.

■ Flexible SMARTVoltage Technology
    - 2.7V–3.6V Program/Erase
    - 2.7V–3.6V Read Operation
    - 12V VPP Fast Production Programming
■ 2.7V or 1.8V I/O Option
    - Reduces Overall System Power
■ Optimized Block Sizes
    - Eight 4-KW Blocks for Data, Top or Bottom Locations
    - Up to Thirty-One 32-KW Blocks for Code
■ High Performance
    - 2.7V–3.6V: 120 ns Max Access Time
■ Block Locking
    - VCC-Level Control through WP#
■ Low Power Consumption
    - 20 mA Maximum Read Current
■ Absolute Hardware-Protection
    - VPP = GND Option
    - VCC Lockout Voltage
■ Extended Temperature Operation
    - –40°C to +85°C
■ Supports Code Plus Data Storage
    - Optimized for FDI, Flash Data Integrator Software
    - Fast Program Suspend Capability
    - Fast Erase Suspend Capability
■ Extended Cycling Capability
    - 10,000 Block Erase Cycles
■ Automated Word Program AND Block Erase
    - CommAND User Interface
    - Status Registers
■ SRAM-Compatible Write Interface
■ Automatic Power Savings Feature
■ Reset/Deep Power-Down
    - 1 µA ICCTypical
    - Spurious Write Lockout
■ StANDard Surface Mount Packaging
    - 48-Ball µBGA* Package
    - 48-Lead TSOP Package
■ Footprint Upgradeable
    - Upgradeable from 2-, 4- AND 8-MBIT Boot Block
■ ETOX™ V (0.4 µ) Flash Technology

Número de pieza(s) : LH28F016SANS LH28F016SANS-70
Sharp
Sharp Electronics
componentes Descripción : 16 MBIT(1 MBIT x 16, 2 MBIT x 8) Flash MEMORY

16 MBIT(1 MBIT x 16, 2 MBIT x 8) Flash MEMORY

componentes Descripción : 16 MBIT 1Mb x16 / Boot Block Flash MEMORY AND 2 MBIT 128Kb x16 SRAM / Multiple MEMORY Product

SUMMARY DESCRIPTION
The M36W216TI is a low voltage Multiple MEMORY Product which combines two MEMORY devices; a
16 MBIT boot block Flash MEMORY AND a 2 MBIT SRAM. Recommended operating conditions do not allow both the Flash MEMORY AND the SRAM MEMORY to be active at the same time. The MEMORY is offered in a Stacked LFBGA66 (12x8mm, 8 x 8 active ball, 0.8 mm pitch) package AND is supplied with all the bits erased (set to ‘1’).

FEATURES SUMMARY
■MULTIPLE MEMORY PRODUCT
– 16 MBIT (1Mb x 16) Boot Block Flash MEMORY
– 2 MBIT (128Kb x 16) SRAM
■SUPPLY VOLTAGE
–VDDF= VDDS= 2.7V to 3.3V
–VDDQF= VDDS= 2.7V to 3.3V
–VPPF= 12V for Fast Program (optional)
■ACCESS TIME: 70ns, 85ns
■LOW POWER CONSUMPTION
■ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M36W216TI: 88CEh
– Bottom Device Code, M36W216BI: 88CFh

componentes Descripción : 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFileMEMORY

PRODUCT OVERVIEW
The DD28F032SA is a high-performance 32-MBIT (33,554,432-bit) block erasable nonvolatile rANDom access MEMORY organized as either 2 Mword x 16, or 4 Mbyte x 8. The DD28F032SA is built using two 28F016SA chips encapsulated in a single 56- lead TSOP Type I package. The DD28F032SA includes sixty-four 64-KB (65,536) blocks or sixtyfour 32-KW (32,768) blocks.

■ User-Selectable 3.3V or 5V VCC
■ User-Configurable x8 or x16 Operation
■ 70 ns Maximum Access Time
■ 28.6 MB/sec Burst Write Transfer Rate
■ 1 Million Typical Erase Cycles per Block
■ 56-Lead, 1.2 x 14 x 20 mm Advanced Dual Die TSOP Package Technology
■ 64 Independently Lockable Blocks
■ Revolutionary Architecture
    - 100% Backwards-Compatible with Intel 28F016SA
    - Pipelined CommAND Execution
    - Program during Erase
■ 2 mA Typical ICC in Static Mode
■ 2 µA Typical Deep Power-Down
■ State-of-the-Art 0.6 µm ETOX™ IV Flash Technology

componentes Descripción : 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFileMEMORY

Intel’s 28F016SV 16-MBIT FlashFileMEMORY is a revolutionary architecture which is the ideal choice for designing embedded direct-execute code AND mass storage data/file flash MEMORY systems. With innovative capabilities, low-power operation, user-selectable VPP voltage AND high read/program performance, the 28F016SV enables the design of truly mobile, high-performance personal computing AND communications products.

SMARTVoltage Technology
  - User-Selectable 3.3V or 5V VCC
  - User-Selectable 5V or 12V VPP
65 ns Access Time
1 Million Erase Cycles per Block
30.8 MB/sec Burst Write Transfer Rate
0.48 MB/sec Sustainable Write Transfer Rate
Configurable x8 or x16 Operation
56-Lead TSOP AND SSOP Type I Packages
Backwards-Compatible with 28F016SA, 28F008SA CommAND Set
Revolutionary Architecture
  - Multiple CommAND Execution
  - Program during Erase
  - CommAND Super-Set of the Intel 28F008SA
  - Page Buffer Program
2 µA Typical Deep Power-Down
32 Independently Lockable Blocks
State-of-the-Art 0.6 µm ETOX™ IV Flash Technology

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