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M12L64164A Hoja de datos - [Elite Semiconductor Memory Technology Inc.

Número de piezaDescripción (Función)Fabricante
M12L64164A 1M x 16 Bit x 4 Banks Synchronous DRAM ESMT
[Elite Semiconductor Memory Technology Inc. ESMT
M12L64164A PDF Hoja de datos : M12L64164A pdf   
M12L64164A image

GENERAL DESCRIPTION
The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

FEATURES
● JEDEC standard 3.3V power supply
● LVTTL compatible with multiplexed address
● Four banks operation
● MRS cycle with address key programs
- CAS Latency (2 & 3)
- Burst Length (1, 2, 4, 8 & full page)
- Burst Type (Sequential & Interleave)
● All inputs are sampled at the positive going edge of the system clock
● DQM for masking
● Auto & self refresh
● 64ms refresh period (4K cycle)
   - 15.6 μ s refresh interval

 

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