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EFA120D-SOT89 Hoja de datos - ETC

Número de piezaDescripción (Función)Fabricante
EFA120D-SOT89 Low Distortion GaAs Power FET ETC
ETC 
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EFA120D-SOT89 Ficha de datos PDF : EFA120D-SOT89 pdf   
EFA120D-SOT89 image

[Excelics]

Features
• LOW COST SURFACE-MOUNT PLASTIC PACKAGE
• +28.0dBm TYPICAL OUTPUT POWER
• 14.0dB TYPICAL POWER GAIN AT 2GHz
• 0.7dB TYPICAL NOISE FIGURE AT 2GHz
• +42dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT AT 2GHz
• 0.5 X 2400 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY

Applications
• Analog and Digital Wireless System
• HPA

 

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