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HB52R1289E22-A6B Hoja de datos - Elpida Memory, Inc

Número de piezaDescripción (Función)Fabricante
HB52R1289E22-A6B 1 GB Registered SDRAM DIMM 128-Mword 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 64 M 4 Components) PC100 SDRAM Elpida
Elpida Memory, Inc Elpida
Otro PDF  no disponible.
HB52R1289E22-A6B Ficha de datos PDF : HB52R1289E22-A6B pdf   
HB52R1289E22-B6B image

Description
The HB52R1289E22 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 8-byte processor applications. The HB52R1289E22 is a 64M × 72 × 2-bank Synchronous Dynamic RAM Module, mounted 36 pieces of 256-Mbit SDRAM (HM5225405BTB) sealed in TCP package, 1 piece of PLL clock driver, 3 pieces register driver and 1 piece of serial EEPROM (2-kbit) for Presence Detect (PD). An outline of the HB52R1289E22 is 168-pin socket type package (dual lead out). Therefore, the HB52R1289E22 makes high density mounting possible without surface mount technology. The HB52R1289E22 provides common data inputs and outputs. Decoupling capacitors are mounted beside TCP on the module board.

Features
• Fully compatible with : JEDEC standard outline 8-byte DIMM : Intel PCB Reference design (Rev. 1.2)
• 168-pin socket type package (dual lead out)
    - Outline: 133.37 mm (length) × 38.10 mm (Height) × 4.80 mm (Thickness)
    - Lead pitch: 1.27 mm
• 3.3 V power supply
• Clock frequency: 100 MHz (max)
• LVTTL interface
• Data bus width: × 72 ECC
• Single pulsed RAS
• 4 Banks can operates simultaneously and independently
• Burst read/write operation and burst read/single write operation capability
• Programmable burst length: 1/2/4/8
• 2 variations of burst sequence
    - Sequential
    - Interleave
• Programmable CE latency : 3/4 (HB52R1289E22-A6B) : 4 (HB52R1289E22-B6B)
• Byte control by DQMB
• Refresh cycles: 8192 refresh cycles/64 ms
• 2 variations of refresh
    - Auto refresh
    - Self refresh

 

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