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EIB1819-1P Hoja de datos - Excelics Semiconductor, Inc.

Número de piezaDescripción (Función)Fabricante
EIB1819-1P 18.7-19.7GHz, 1W Internally Matched Power FET Excelics
Excelics Semiconductor, Inc. 
Otro PDF  2003  
EIB1819-1P Ficha de datos PDF : EIB1819-1P pdf   
EIB1819-1P image

18.7-19.7GHz, 1W Internally Matched Power FET

• 18.7-19.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM
• EIA FEATURES HIGH PAE( 25% TYPICAL)
• EIB FEATURES HIGH IP3(43dBm TYPICAL)
• +30.0/+29.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB
• 6.5/5.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB
• NON-HERMETIC METAL FLANGE PACKAGE

 

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