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FDN336P Hoja de datos - Fairchild Semiconductor

Número de piezaDescripción (Función)Fabricante
FDN336P Single P-Channel 2.5V Specified PowerTrench® MOSFET Fairchild
Fairchild Semiconductor Fairchild
Otro PDF  1998  
FDN336P PDF Hoja de datos : FDN336P pdf   
FDN336P image

General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits and DC/DC conversion.

Features
• –1.3 A, –20 V. RDS(ON) = 0.20 Ω @ VGS = –4.5 V
                          RDS(ON) = 0.27 Ω @ VGS = –2.5 V
• Low gate charge (3.6 nC typical)
• High performance trench technology for extremely
   low RDS(ON)
• SuperSOTTM -3 provides low RDS(ON) and 30%
   higher power handling capability than SOT23 in
   the same footprint

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