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FDP65N06 Hoja de datos - Fairchild Semiconductor

Número de piezaDescripción (Función)Fabricante
FDP65N06 60V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
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FDP65N06 Ficha de datos PDF : FDP65N06 pdf   
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Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

Features
• 65A, 60V, RDS(on) = 0.016Ω @VGS = 10 V
• Low gate charge ( typical 132nC)
• Low Crss ( typical 35pF)
• Fast switching
• Improved dv/dt capability

 

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