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FQD11P06TM Datasheet PDF - Fairchild Semiconductor

Número de pieza
componentes Descripción
Fabricante
FQD11P06TM
Fairchild
Fairchild Semiconductor Fairchild
Other PDF
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PDF
FQD11P06TM Datasheet PDF : FQD11P06TM pdf     
FQD11P06 image

General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

Features
-9.4A, -60V, RDS(on)= 0.185Ω@VGS= -10 V
Low gate charge ( typical 13 nC)
Low Crss ( typical 45 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability

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