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FQP12N60C Hoja de datos - Fairchild Semiconductor

Número de piezaDescripción (Función)Fabricante
FQP12N60C 600V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
Otro PDF  2003  
FQP12N60C Ficha de datos PDF : FQP12N60C pdf   
FQP12N60C image

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devicesare well suited for high
efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

Features
• 12A, 600V, RDS(on)= 0.65Ω@VGS= 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 21pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant

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