datasheetbank_Logo   búsqueda de Hoja de datos y gratuito Fichas de descarga
Número de pieza  
casa  >>>  IR  >>> IRG4BC40S PDF

IRG4BC40S Hoja de datos - International Rectifier

Número de piezaDescripción (Función)Fabricante
IRG4BC40S INSULATED GATE BIPOLAR TRANSISTOR IR
International Rectifier IR
IRG4BC40S PDF Hoja de datos : IRG4BC40S pdf   
IRG4BC40S image

Features
• Standard: optimized for minimum saturation
   voltage and low operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter
   parameter distribution and higher efficiency than
   Generation 3
• Industry standard TO-220AB package

Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
   industry-standard Generation 3 IR IGBTs

Enlace de página (HTML): 1  2  3  4  5  6  7  8 
 

Otras búsquedas fabricante relacionadas con IRG4BC40S ficha técnica

Número de piezaDescripción (Función)PDFFabricante
MMG05N60D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate MMG05N60D View Motorola => Freescale
MGS13002DD Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate MGS13002DD View Motorola => Freescale
MGS05N60D Insulated Gate Bipolar Transistor MGS05N60D View ON Semiconductor
MGS13002D Insulated Gate Bipolar Transistor MGS13002D View ON Semiconductor
MGP15N60U Insulated Gate Bipolar Transistor MGP15N60U View ON Semiconductor
MGW12N120 Insulated Gate Bipolar Transistor MGW12N120 View ON Semiconductor
MGP20N60U Insulated Gate Bipolar Transistor MGP20N60U View ON Semiconductor
MGP14N60E Insulated Gate Bipolar Transistor MGP14N60E View ON Semiconductor
MGP4N60E Insulated Gate Bipolar Transistor MGP4N60E View ON Semiconductor
MGP14N60E Insulated Gate Bipolar Transistor MGP14N60E View Motorola => Freescale

Compartir Enlace :  

English 한국어 русский 简体中文 日本語


All Rights Reserved © datasheetbank.com 2014 - 2019  ] [ política De Privacidad ] [ Solicitud Hoja de datos ]