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Número de piezaDescripción (Función)Fabricante
5962R0922503V9A Rad Hard and SEE Hard 6A Synchronous Buck Regulator Intersil
Intersil Intersil
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5962R0922503V9A Ficha de datos PDF : 5962R0922503V9A pdf   
ISL70001ASEH image

The ISL70001ASEH is a radiation hardened and SEE hardened high efficiency monolithic synchronous buck regulator with integrated MOSFETs. This single chip power solution operates over an input voltage range of 3V to 5.5V and provides a tightly regulated output voltage that is externally adjustable from 0.8V to ~85% of the input voltage. Output load current capacity is 6A for TJ < +145°C. The ISL70001ASEH utilizes peak current-mode control for excellent output load transient response and features integrated compensation and switches at a fixed frequency of 1MHz to reduce component size and count. In application where two POLs are needed, two ISL70001ASEH devices can be synchronized 180° out-of-phase to reduce the overall input RMS ripple current. The internal synchronous power switches are optimized for high efficiency and good thermal performance.

Features
• ±1% Reference Voltage Over Line, Load, Temperature and Radiation
• Current Mode Control for Excellent Dynamic Response
• Full Mil-Temp Range Operation (TA = -55°C to +125°C)
• 50% Lower Shutdown Supply Current than the ISL70001SEH
• Available in a thermally enhanced heatsink package - R48.B
• Highly Efficient: 94% Peak Efficiency
• Operates from 3V to 5.5V Supply
• Adjustable Output Voltage
    - Two External Resistors Set VOUT from 0.8V to ~85% of VIN
• Bi-directional SYNC Pin Allows Two Devices to be Synchronized 180° Out-of-Phase
• Power-Good Output Voltage Monitor
• Adjustable Analog Soft-Start
• Input Undervoltage, Output Undervoltage and Output Overcurrent Protection
• Electrically Screened to DLA SMD 5962-09225
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Hardness
   - Total Dose [50-300rad(Si)/s] . . . . . . . . . . . . . . 100krad(Si)
   - Total Dose [<10mrad(Si)/s] . . . . . . . . . . . . . . 100krad(Si)*
* Product capability established by initial characterization. The EH version is acceptance tested on a wafer-by-wafer basis to 50krad(Si) at low dose rate.
• SEE Hardness
   - SEL and SEB LETeff . . . . . . . . . . . . 86.4MeV/mg/cm2 min
   - SEFI X-section (LETeff = 86.4MeV/mg/cm2) 1.4 x 10-6 cm2 max
   - SET LETeff (< 1 Pulse Perturbation) 86.4MeV/mg/cm2 min

Applications
• FPGA, CPLD, DSP, CPU Core or I/O Voltages
• Low-Voltage, High-Density Distributed Power Systems

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