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BUZ60B Hoja de datos - Intersil

Número de piezaDescripción (Función)Fabricante
BUZ60B 4.5A, 400V, 1.500 Ohm, N-Channel Power MOSFET Intersil
Intersil Intersil
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BUZ60B Ficha de datos PDF : BUZ60B pdf   
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This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.

• 4.5A, 400V
• rDS(ON) = 1.500Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
    - TB334 “Guidelines for Soldering Surface Mount
        Components to PC Boards”

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