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2N6668 Hoja de datos - Inchange Semiconductor

Número de piezaDescripción (Función)Fabricante
2N6668 Silicon PNP Darlington Power Transistor Iscsemi
Inchange Semiconductor Iscsemi
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2N6668 Ficha de datos PDF : 2N6668 pdf   
2N6668 image

DESCRIPTION
·High DC Current Gain-
   : hFE = 1000(Min)@ IC= -5A
·Collector-Emitter Sustaining Voltage-
   : VCEO(SUS) = -80V(Min)
·Low Collector-Emitter Saturation Voltage-
   : VCE(sat) = -2.0V(Max)@ IC= -5A
·Complement to Type 2N6388

APPLICATIONS
·Designed for general purpose amplifier and low speed switching applications.

 

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