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MJ900 Hoja de datos - Inchange Semiconductor

Número de piezaDescripción (Función)Fabricante
MJ900 Silicon PNP Darlington Power Transistor Iscsemi
Inchange Semiconductor Iscsemi
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MJ900 Ficha de datos PDF : MJ900 pdf   
MJ900 image

DESCRIPTION
• Collector-Emitter Breakdown Voltage-
   : V(BR)CEO=-60V(Min.)
• High DC Current Gain-
   : hFE= 1000(Min.)@IC=-3A
• Low Collector Saturation Voltage-
   : VCE (sat)=-2.0V(Max.)@ IC=-3A
  
APPLICATIONS
• Designed for use as output devices in complementary general purpose amplifier applications.

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