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MX29L1611 Hoja de datos - Macronix International

Número de piezaDescripción (Función)Fabricante
MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM MCNIX
Macronix International MCNIX
MX29L1611 PDF Hoja de datos : MX29L1611 pdf   
MX29L1611 image

GENERAL DESCRIPTION
The MX29L1611G is a 16-mega bit Flash memory organized as either 1M wordx16 or 2M bytex8. The MX29L1611G includes 32 sectors of 64KB(65,536 Bytes or 32,768 words). MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29L1611G is packaged in 42 pin PDIP.

FEATURES
• 3.3V ±10% for write and read operation
• 11V Vpp erase/programming operation
• Endurance: 100 cycles
• Fast random access time: 90ns/100ns/120ns
• Fast page access time: 30ns (Only for 29L1611PC-90/ 10/12)
• Sector erase architecture
    - 32 equal sectors of 64k bytes each
    - Sector erase time: 200ms typical
• Auto Erase and Auto Program Algorithms
    - Automatically erases any one of the sectors or the whole chip
    - Automatically programs and verifies data at specified addresses
• Status Register feature for detection of program or erase cycle completion
• Low VCC write inhibit is equal to or less than 1.8V
• Software data protection
• Page program operation
    - Internal address and data latches for 64 words per page
    - Page programming time: 5ms typical
• Low power dissipation
    - 50mA active current
    - 20uA standby current
• Two independently Protected sectors
• Package type
    - 42 pin plastic DIP
* For page mode read only

 

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