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2N3741A Hoja de datos - Microsemi Corporation

Número de piezaDescripción (Función)Fabricante
2N3741A Medium Power PNP Transistors Microsemi
Microsemi Corporation Microsemi
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2N3741A Ficha de datos PDF : 2N3741A pdf   
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DESCRIPTION:
These power transistors are produced by PPCs DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications.
Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200°C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life.

FEATURES:
● Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp
● High Gain Characteristics: hFE @ IC = 250 mA: 30-100
● Excellent Safe Area Limits
● Low Collector Cutoff Current: 100 nA (Max) 2N3741A

APPLICATIONS:
● Drivers
● Switches
● Medium-Power Amplifiers

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