NE5520279A-T1A - NEC => Renesas Technology Hoja de datos - DataSheetBank

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NE5520279A-T1A Hoja de datos - NEC => Renesas Technology

NE5520279A image

Número de pieza

NE5520279A-T1A

componentes Descripción

3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

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3 Pages

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40.2 kB

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NEC => Renesas Technology

NEC

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Número de pieza

componentes Descripción

PDF

Fabricante

NE5520379A-T1A-A

NEC'S 3.2 V, 3 W, L/S BAND MEDIUM POWER SILICON LD-MOSFET

California Eastern Laboratories.

L/S BAND MEDIUM POWER GaAs MESFET

California Eastern Laboratories.

L&S BAND MEDIUM POWER GaAs MESFET

NEC => Renesas Technology

½W L, S-BAND SPDT SWITCH

California Eastern Laboratories.

NEC's 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET

California Eastern Laboratories.

0.4 W L, S-BAND POWER GaAs MES FET

NEC => Renesas Technology

0.2 W L, S-BAND POWER GaAs MES FET

NEC => Renesas Technology

NEC'S 3W, L/S-BAND MEDIUM POWER GaAs MESFET

California Eastern Laboratories.

L,S BAND POWER GaAs FET

Mitsumi

L, S BAND POWER GaAs FET

Mitsumi

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