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BD676A Hoja de datos - New Jersey Semiconductor

Número de piezaDescripción (Función)Fabricante
BD676A Silicon PNP Darlington Power Transistor NJSEMI
New Jersey Semiconductor NJSEMI
BD676A PDF Hoja de datos : BD676A pdf   
BD676A image

DESCRIPTION
• Collector-Emitter Breakdown Voltage— : V(BR)CEo = -45 V
• DC Current Gain— : hFE = 750(Min)@lc=-2A
• Complement to Type BD675A

APPLICATIONS
• Designed for use as output devices in complementary general-purpose amplifier applications.

 

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