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NTE21128 Hoja de datos - NTE Electronics

Número de piezaDescripción (Función)Fabricante
NTE21128 Integrated Circuit NMOS, 128K (16K x 8) UV EPROM NTE-Electronic
NTE Electronics NTE-Electronic
NTE21128 PDF Hoja de datos : NTE21128 pdf   
NTE21128 image

The NTE21128 is a 131,072 bit UV erasable and electrically programmable memory EPROM in a 28–Lead DIP type package organized as 16,384 words by 8 bits. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure.

• Access Time: 250ns
• Single 5V Supply Voltage
• Low Standby Current: 40mA Max
• TTL Compatible During Read and Program
• Fast Programming Algorithm
• Programming Voltage: 12V Typ


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