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BF1109WR Hoja de datos - NXP Semiconductors.

Número de piezaDescripción (Función)Fabricante
BF1109WR N-channel dual-gate MOS-FETs NXP
NXP Semiconductors. NXP
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BF1109WR Ficha de datos PDF : BF1109WR pdf   
BF1109 image

DESCRIPTION
Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.

FEATURES
• Short channel transistor with high forward transfer admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz
• Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

APPLICATIONS
• VHF and UHF applications with 9 V supply voltage, such as television tuners and professional communications equipment.

 

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