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JS28F128J3D-75 Hoja de datos - Numonyx -> Micron

Número de piezaDescripción (Función)Fabricante
JS28F128J3D-75 Numonyx™ Embedded Flash Memory (J3 v D) Numonyx
Numonyx -> Micron Numonyx
JS28F128J3D-75 PDF Hoja de datos : JS28F128J3D-75 pdf   
JS28F320J3D75E image

Introduction
This document contains information pertaining to the Numonyx™ Embedded Flash Memory (J3 v D) device features, operation, and specifications.

Product Features
■ Architecture
    — Symmetrical 128-Kbyte blocks
    — 256 Mbit (256 blocks)
    — 128 Mbit (128 blocks)
    — 64 Mbit (64 blocks)
    — 32 Mbit (32 blocks)
■ Performance
    — 75 ns Initial Access Speed (32,64,128 Mbit densities)
    — 95 ns Initial Access Speed (256Mbit only)
    — 25 ns 8-word and 4-word Asynchronous page-mode reads
    — 32-Byte Write buffer; 4 µs per Byte Effective programming time
■ System Voltage
    — VCC = 2.7 V to 3.6 V
    — VCCQ = 2.7 V to 3.6 V
■ Packaging
    — 56-Lead TSOP (32, 64, 128, 256 Mbit)
    — 64-Ball Numonyx Easy BGA package (32, 64, 128 and 256 Mbit)
■ Security
    — Enhanced security options for code protection
    — 128-bit Protection Register: 64-bits Unique device identifier bits 64-bits User-programmable OTP bits
    — Absolute protection with VPEN = GND
    — Individual block locking
    — Block erase/program lockout during power transitions
■ Software
    — Program and erase suspend support
    — Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible
■ Quality and Reliability
    — Operating temperature: -40 °C to +85 °C
    — 100K Minimum erase cycles per block
    — 0.13 µm ETOX™ VIII Process technology

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