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1N5817RLG Hoja de datos - ON Semiconductor

Número de pieza1N5817RLG ON-Semiconductor
ON Semiconductor ON-Semiconductor
Descripción (Función)SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS
1N5817RLG PDF Hoja de datos : 1N5817RLG pdf   
1N5818 image

Axial Lead Rectifiers

This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.

Features
• Extremely Low VF
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
• These are Pb−Free Devices*

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