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Número de piezaDescripción (Función)Fabricante
MJ11013 High-Current Complementary Silicon Transistors ONSEMI
ON Semiconductor ONSEMI
MJ11013 PDF Hoja de datos : MJ11013 pdf   
MJ11014 image

High-Current Complementary Silicon Transistors

. . . for use as output devices in complementary general purpose amplifier applications.

• High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc
• Monolithic Construction with Built–in Base Emitter Shunt Resistor
• Junction Temperature to +200°C
   

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