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IRF830 Hoja de datos - Silikron Semiconductor Co.,LTD.

Número de piezaDescripción (Función)Fabricante
IRF830 N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET SILIKRON
Silikron Semiconductor Co.,LTD. SILIKRON
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IRF830 Ficha de datos PDF : IRF830 pdf   
IRF830 image

The IRF830 is a new generation of high voltage N–Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density.
■ Extremely high dv/dt capability
■ Low Gate Charge Qg results in
    Simple Drive Requirement
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
■ High current, high speed switching
■ Lighting
■ Ideal for off-line power supply, adaptor, PFC

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