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STB10N60M2 Hoja de datos - STMicroelectronics

N煤mero de piezaDescripci贸n (Funci贸n)Fabricante
STB10N60M2 N-channel 600 V, 0.550 惟 typ., 7.5 A MDmesh II Plus鈩 low Qg Power MOSFETs in D虏PAK, DPAK, TO-220 and IPAK packages ST-Microelectronics
STMicroelectronics ST-Microelectronics
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STB10N60M2 Ficha de datos PDF : STB10N60M2 pdf   
STP10N60M2 image

Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh鈩 technology: MDmesh II Plus鈩 low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.

Features
鈥 Extremely low gate charge
鈥 Lower RDS(on) x area vs previous generation
鈥 Low gate input resistance
鈥 100% avalanche tested
鈥 Zener-protected

Applications
鈥 Switching applications

 

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