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STD2NB80 Hoja de datos - STMicroelectronics

Número de piezaDescripción (Función)Fabricante
STD2NB80 N-CHANNEL 800V - 4.6 Ω - 1.9A - IPAK/DPAK PowerMESH™ MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
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STD2NB80 Ficha de datos PDF : STD2NB80 pdf   
STD2NB80 image

DESCRIPTION
Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 4.6 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
■ ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL (2500 UNITS)

APPLICATIONS
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

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