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STD2NM60 Hoja de datos - STMicroelectronics

Número de piezaDescripción (Función)Fabricante
STD2NM60 N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK Zener-Protected MDmesh™ Power MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
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STD2NM60 Ficha de datos PDF : STD2NM60 pdf   
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DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition’s products.
   
■ TYPICAL RDS(on) = 2.8 Ω
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE
    CHARGE
■ LOW GATE INPUT RESISTANCE
■ TIGHT PROCESS CONTROL AND HIGH
    MANUFACTORING YIELDS
   
APPLICATIONS
    The MDmesh™ family is very suitable for increase
    the power density of high voltage converters allowing
    system miniaturization and higher efficiencies.
   

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