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STD9N60M2 Hoja de datos - STMicroelectronics

Número de piezaDescripción (Función)Fabricante
STD9N60M2 N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus™ low Qg Power MOSFET in DPAK, TO-220 and IPAK packages ST-Microelectronics
STMicroelectronics ST-Microelectronics
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STD9N60M2 Ficha de datos PDF : STD9N60M2 pdf   
STP9N60M2 image

Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.

Features
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected

Applications
• Switching applications

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