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Número de piezaDescripción (Función)Fabricante
MJE13003G-P-E-TM3-B NPN SILICON POWER TRANSISTOR UTC
Unisonic Technologies UTC
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MJE13003G-P-E-TM3-B Ficha de datos PDF : MJE13003G-P-E-TM3-B pdf   
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DESCRIPTION
These devices are designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. 

FEATURES
* Reverse biased SOA with inductive load @ Tc=100°C
* Inductive switching matrix0.5 ~ 1.5 Amp, 25 and 100°C
Typical tc = 290ns @ 1A, 100°C.
* 700V blocking capability

„  APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/relay drivers
* Deflection circuits

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