PMBD353 Ver la hoja de datos (PDF) - NXP Semiconductors.
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PMBD353 Datasheet PDF : 7 Pages
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NXP Semiconductors
Schottky barrier double diode
Product data sheet
PMBD353
FEATURES
• Low forward voltage
• Small SMD package
• Low capacitance.
APPLICATIONS
• UHF mixer
• Sampling circuits
• Modulators
• Phase detection.
DESCRIPTION
Planar Schottky barrier double diode
in a SOT23 small plastic SMD
package.
MARKING
TYPE NUMBER
PMBD353
MARKING
CODE(1)
∗4F
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
PINNING
PIN
DESCRIPTION
1 cathode k1
2 anode a2
3 common connection a1, k2
handbook, 2 columns
3
handbook, 2 columns
3
1
2
1
2
MGC487
Top view
MGC421
Fig.1 Simplified outline (SOT23) pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
Per diode
VR
IF
Tstg
Tj
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
MIN.
MAX.
UNIT
−
4
V
−
30
mA
−65
+150
°C
−
100
°C
2001 Oct 15
2
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