MG150J1ZS50 Ver la hoja de datos (PDF) - Toshiba
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MG150J1ZS50 Datasheet PDF : 6 Pages
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MG150J1ZS50
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturationvoltage
Input capacitance
Turn-on delay time
Rise time
Switching time
Turn-on time
Turn-off delay time
Fall time
Turn-off time
Reverse current
Forward voltage
Reverse recovery time
Thermal resistance
IGES
ICES
VGE (off)
VCE (sat)
Cies
td (on)
tr
ton
td (off)
tf
toff
IR
VF
trr
Rth (j-c)
VGE = ±20V, VCE = 0
―
VCE = 600V, VGE = 0
―
IC = 15mA, VCE = 5V
5.0
IC = 150A,VGE = 15V
―
VCE = 10V, VGE = 0, f = 1MHz
―
―
Inductive load
VCC = 300V
IC = 150A,
VGE = ±15V
RG = 6.2Ω
―
―
―
(Note 1) ―
―
VR = 600V
―
IF = 150A, VGE = 0
―
IF = 150A, VGE = −10V
di / dt = 200A / µs
―
Transistor stage
―
Diode stage
―
― ±500 nA
―
2.0 mA
7.0
8.0
V
2.10 2.70
V
14200 ―
pF
0.15 0.30
0.15 0.30
0.50 1.00
µs
0.20 0.40
0.15 0.30
0.50 1.00
―
1.0 mA
2.30 3.00
V
0.08 0.15 µs
― 0.16
°C / W
― 0.35
Note 1: Switching time test circuit & timing chart
Note 2: Silicone grease is applied.
2
2001-08-16
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