DIM800FSS17-A000(2002) Ver la hoja de datos (PDF) - Dynex Semiconductor
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DIM800FSS17-A000 Datasheet PDF : 11 Pages
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DIM600DCM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 125˚C unless stated otherwise
Symbol
Parameter
td(off)
Turn-off delay time
t
Fall time
f
EOFF
Turn-off energy loss
td(on)
Turn-on delay time
tr
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge Diode arm
IGBT arm
Irr
Diode reverse recovery current Diode arm
IGBT arm
Erec
Diode reverse recovery energy Diode arm
IGBT arm
Test Conditions
IC = 600A
VGE = ±15V
VCE = 900V
R
G(ON)
=
R
G(OFF)
=
3.3Ω
L ~ 100nH
IF = 600A,
VR = 50% VCES,
dIF/dt = 3000A/µs
Min. Typ. Max. Units
-
1500
-
ns
-
170
-
ns
-
270
-
mJ
-
400
-
ns
-
250
-
ns
-
350
-
mJ
-
650
-
µC
-
250
-
µC
-
900
-
A
-
400
-
A
-
380
-
mJ
-
150
-
mJ
6/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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