FS50UM-3
Electrical Characteristics
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
V(BR)DSS
IGSS
IDSS
VGS(th)
rDS(ON)
VDS(ON)
| yfs |
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
Rth(ch-c)
trr
(Tch = 25°C)
Min Typ Max Unit
Test Conditions
150
—
—
V
ID = 1 mA, VGS = 0 V
—
—
±0.1
µA VGS = ±20 V, VDS = 0 V
—
—
0.1
mA VDS = 150 V, VGS = 0 V
2.0
3.0
4.0
V
ID = 1 mA, VDS = 10 V
—
24
31
mΩ ID = 25 A, VGS = 10 V
—
0.600 0.775
V
ID = 25 A, VGS = 10 V
—
55
—
S
ID = 25 A, VDS = 10 V
—
6540
—
pF VDS = 10 V, VGS = 0 V,
—
860
—
pF f = 1MHz
—
360
—
pF
—
95
—
—
155
—
—
380
—
ns VDD = 80 V, ID = 25 A,
ns VGS = 10 V,
ns
RGEN = RGS = 50 Ω
—
180
—
ns
—
1.0
1.5
V
IS = 25 A, VGS = 0 V
—
—
1.0 °C/W Channel to case
—
130
—
ns IS = 50 A, dis/dt = –100 A/µs
Rev.2.00 Aug 07, 2006 page 2 of 6