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IS62WV2568ALL

256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

Integrated Silicon Solution 

IS62WV2568ALL, IS62WV2568BLL

CAPACITANCE(1)

Symbol Parameter

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 0V

8

pF

COUT

Input/Output Capacitance

VOUT = 0V

10

pF

Note:

1. Tested initially and after any design or process changes that may affect these parameters.

ISSI ®

AC TEST CONDITIONS

Parameter

Input Pulse Level

Input Rise and Fall Times

Input and Output Timing

and Reference Level

Output Load

62WV2568ALL

(Unit)

0.4V to Vcc-0.2V

5 ns

VREF

See Figures 1 and 2

62WV2568BLL

(Unit)

0.4V to Vcc-0.3V

5ns

VREF

See Figures 1 and 2

R1(Ω)

R2(Ω)

VREF

VTM

1.65-2.2V

3070

3150

0.9V

1.8V

2.5V - 3.6V

3070

3150

1.5V

2.8V

AC TEST LOADS

R1

VTM

OUTPUT

30 pF

R2

Including

jig and

scope

R1

VTM

OUTPUT

5 pF

R2

Including

jig and

scope

Figure 1

Figure 2

4

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. B

06/20/05

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