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P4C164L-100P3I Ver la hoja de datos (PDF) - Semiconductor Corporation

Número de pieza
componentes Descripción
Lista de partido
P4C164L-100P3I
PYRAMID
Semiconductor Corporation PYRAMID
P4C164L-100P3I Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
P4C164L
TIMING WAVEFORM OF WRITE CYCLE NO.2 (CE CONTROLLED)(6)
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
GND to 3.0V
3ns
Input Timing Reference Level
1.5V
Output Timing Reference Level
1.5V
Output Load
See Figures 1 and 2
TRUTH TABLE
Mode
CE
1
CE2
OE
WE
I/O
Power
Standby H X X X High Z Standby
Standby X L X X High Z Standby
D
OUT
Disabled L
HH
H High Z Active
Read
Write
L
H
L
H DOUT Active
L H X L High Z Active
Figure 1. Output Load
* including scope and test fixture.
Note:
Because of the high speed of the P4C164L, care must be taken when
testing this device; an inadequate setup can cause a normal
functioning part to be rejected as faulty. Long high-inductance leads
that cause supply bounce must be avoided by bringing the VCC and
ground planes directly up to the contactor fingers. A 0.01 µF high
frequency capacitor is also required between VCC and ground.
Figure 2. Thevenin Equivalent
To avoid signal reflections, proper termination must be used; for
example, a 50test environment should be terminated into a 50load
with 1.77V (Thevenin Voltage) at the comparator input, and a 589
resistor must be used in series with DOUT to match 639(Thevenin
Resistance).
Document # SRAM116 REV B
Page 6 of 11

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