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SC420IMLTR

High Speed, Combi-Sense™, Synchronous Power MOSFET Driver for Mobile Applications

Semtech Corporation 

SC420

POWER MANAGEMENT

Absolute Maximum Ratings

Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified

in the Electrical Characteristics section is not implied.

Parameter

Symbol

Conditions

Min

Max

Units

VIN2 Supply Voltage

VIN2

30

V

BST to PGND

40

V

BST to DRN

VIN + 2

V

DRN to PGND

tPULSE<100ns

static

-5

34

V

-2

30

TG

-2

BST + 0.3

V

BG

- 0.3

VIN + 0.3

V

VPN to PGND

VPN

30

V

VIN to PGND

VIN

7

V

EN, CO, CDELAY

- 0.3

VIN + 0.3

V

Continuous Power Dissipation

Thermal Resistance Junction to Case

Thermal Resistance Junction to

Ambient (1)

PD

Tamb = 25 oC,TJ = 125 oC

Tcase = 25 oC, TJ = 125oC

θJC

θJA

0.66

2.56

3

48

W

oC/W

oC/W

Operating Junction Temperature

T

J

Range

- 40

125

oC

Storange Temperature Range

Peak IR Reflow (10-40 sec)

TSTG

TIRreflow

- 65

150

oC

240

oC

Note:

(1) Performance when used according to manufacturing guidelines, refer to Applications Information section for more information

(2) Specification refers to application circuit in Figure 1

Electrical Characteristics

Unless specified: TA = 25°C; VIN = 5V; 0V < VDRN < 25V

Parameter

Symbol

Conditions

Min

Typ

Max

Units

Power Supply

Supply Voltage

Quiescent Current, Operating

(static)

Quiescent Current, Tri-state

Quiescent Current, Shutdown

(1) Guaranteed by design

© 2003 Semtech Corp.

V IN

V IN2

IQop

IQ ts

IQsd

4.75

CO = 0V, EN >

2.2V

CO floating

CO = 0V, EN = 0V

2

5

6

V

27

V

2.3

mA

2.3

mA

0.2

20

µA

United States Patent No. 6,441,597

www.semtech.com

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