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SSD20N15-250D Datasheet PDF : 2 Pages
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Elektronische Bauelemente
SSD20N15-250D
N-Ch Enhancement Mode Power MOSFET
12A, 150V, RDS(ON) 255mΩ
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench
process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable
and battery-powered products such as computers, printers, PCMCIA cards, cellular
and cordless telephones.
TO-252(D-Pack)
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe DPAK saves board space.
Fast switching speed.
High performance trench technology.
PRODUCT SUMMARY
VDS(V)
150
PRODUCT SUMMARY
RDS(on) m(
255@VGS= 10V
290@VGS= 5.5V
ID(A)
12
11
Gate
Drain
Source
A
B
C
D
GE
K
HF
N
O
P
M
J
Millimeter
Millimeter
REF. Min. Max. REF. Min. Max.
A 6.4
6.8
J
2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
VDS
150
Gate-Source Voltage
VGS
±20
Continuous Drain Current a
ID @TC=25℃
12
Pulsed Drain Current b
IDM
36
Continuous Source Current (Diode Conduction) a
IS
30
Total Power Dissipation a
PD @TC=25℃
50
Operating Junction and Storage Temperature Range TJ, TSTG
-55 ~ 175
THERMAL RESISTANCE RATINGS
Maximum Thermal Resistance Junction-Ambient a
RθJA
50
Maximum Thermal Resistance Junction-Case
RθJC
3.0
Notes：
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
UNIT
V
V
A
A
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
22-Jul-2010 Rev.A
Any changes of specification will not be informed individually.
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