2N6051 Ver la hoja de datos (PDF) - Comset Semiconductors
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2N6051 Datasheet PDF : 3 Pages
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PNP 2N6050 – 2N6051 – 2N6052
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ MAx Unit
ICEX
ICEO
IEBO
VCEO(SUS)
Collector Cutoff
Current
Collector Cutoff
Current
Emitter Cutoff
Current
VCE= VCEX =-60 V, VBE=1.5 V
VCE= VCEX =-80 V, VBE=1.5 V
VCE= VCEX =-100 V
VBE=1.5 V
VCE= VCEX =-60 V, VBE=1.5 V
TC=150°C
VCE= VCEX =-80 V, VBE=1.5 V
TC=150°C
VCE= VCEX =-100 V
VBE=1.5 V, TC=150°C
VCE=-30 Vdc, IB=0
VCE=-40 Vdc, IB=0
VCE=-50 Vdc, IB=0
VEB=-5 V
Collector-Emitter
Sustaining Voltage IC=-0.1 A
(*)
VCE(SAT)
VBE(SAT)
VBE(ON)
Collector-Emitter
saturation Voltage
(*)
IC=-6 A, IB=-24 mA
IC=-12 A, IB=-120 mA
Base-Emitter
Saturation Voltage IC=-12 A, IB=-120 mA
(*)
Base-Emitter
Voltage (*)
IC=-6 A, VCE=-3 V
fT
Transition
Frequency
IC=-5 A, VCE=-3 V, f=1 MHz
VCE=-3 V, IC=-6.0 A
hFE
DC Current Gain
(*)
VCE=-3.0 V, IC=-12 A
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
17/10/2012
COMSET SEMICONDUCTORS
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-
-
-
-
-
-
-
-
-
-
-
-60
-80
-100
-
-
-
-
4
750
100
-
- -500 µA
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-
-
-5 mA
-
-
- -1.0 mA
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-
- -2.0 mA
-
-
-
-
-
V
-
-
- -2.0
V
- -3.0
-
-4 V
- -2.8 V
-
- MHz
- 18000 -
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-
2|3
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