BUX84 Ver la hoja de datos (PDF) - New Jersey Semiconductor
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BUX84 Datasheet PDF : 2 Pages
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BUX85
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
Characteristic
| Symbol
OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage
(lc = 100 mAdc, (L = 25 mH) See fig. 1
Collector Cutoff Current
(VcES =Rated Value)
(VCES = Rated Value, Tc = 125°C)
vCEO(sus)
ICES
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
teo
ON CHARACTERISTICS (1)
DC Current Gain
hFE
(IC = 0.1Adc,VCE = 5V)
Collector-Emitter Saturation Voltage
(lc = 0.3 Adc, IB = 30 mAdc)
(IC = 1 Adc, IB = 200 mAdc)
vCE(sat)
Base-Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.2 Adc)
VBE(sat)
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product
fr
(IC = 500 mAdc, VCE = 1 0 Vdc, f = 1 MHz)
SWITCHING CHARACTERISTICS
Turn-on Time
Storage Time
Fall Time
Vcc ~ 250 Vdc, lc - 1 A
ton
IB1 =0.2 A, lB2 = 0.4A
%
See fig. 2
tf
Fall Time
Same above cond. at TC = 95°C
•f
(1) Pulse Test: PW = 300 us, Duty Cycle £2%.
Win | Typ
450
—
—
—
—
—
30
50
—
—
—
—
4
—
—
0.3
—
2
—
0.3
—
—
Max
Unit
—
Vdc
mAdc
0.2
1.5
1
mAdc
—
—
Vdc
0.8
1
1.1
Vdc
—
MHz
0.5
us
3.5
us
—
US
1.4
us
BUX85
PACKAGE DIMENSIONS
TO-220AB
T , SEATING
-T-l PLANE
STYLE 1:
PIN1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTHOLUNG DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.405
C 0.160 0.190
D 0.025 0.035
F 0.142 0.147
G 0.095 0.105
H 0.110 0.155
J 0.018 0.025
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
0 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045
—
f
— 0.080
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70 14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
—
—
2.04
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