Rev. 1.1
UTRON
UT62V25616(I)
256K X 16 BIT LOW POWER CMOS SRAM
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
SYMBOL
RATING
UNIT
Terminal Voltage with Respect to VSS
Operating Temperature
Industrial
Storage Temperature
VTERM
TA
TSTG
-0.3 to 3.6
V
-40 to 85
℃
-65 to +150
℃
Power Dissipation
PD
1
W
DC Output Current
IOUT
50
mA
Soldering Temperature (under 10 secs)
Tsolder
260
℃
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
DC ELECTRICAL CHARACTERISTICS (VCC = 2.3V~2.7V, TA = -40℃ to 85℃(I))
PARAMETER
SYMBOL TEST CONDITION
MIN. TYP. MAX. UNIT
Power Voltage
VCC
2.3 2.5 2.7
V
Input High Voltage
VIH
2.0 - VCC+0.3 V
Input Low Voltage
VIL
-0.2 -
0.6
V
Input Leakage Current ILI
Output Leakage Current ILO
VSS ≦VIN ≦VCC
VSS ≦VI/O ≦VCC; Output Disabled
-1 -
1
µA
-1 -
1
µA
Output High Voltage
VOH IOH= -0.5mA
2.0 -
-
V
Output Low Voltage
VOL IOL= 0.5mA
--
0.4
V
Operating Power
Supply Current
ICC Cycle time=min, 100%duty,
I/O=0mA, CE =VIL ;
70 - 20 30 mA
100 - 15 20 mA
Average Operation
Current
Icc1 Cycle time=1µs,100%duty,I/O=0mA,
-3
CE ≦0.2V,other pins at 0.2V or Vcc-0.2V,
4
mA
Icc2 Cycle time=500ns,100%duty,I/O=0mA,
-6
8
mA
CE ≦0.2V,other pins at 0.2V or Vcc-0.2V,
Standby Current (TTL)
ISB
CE =VIH, other pins =VIL or VIH,
- 0.3 0.5 mA
Standby Current (CMOS) ISB1
CE =VCC-0.2V,
other pins at 0.2V or Vcc-0.2V,
-L - 20
80
µA
-LL - 2
15
µA
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
3
P80067