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BLF7G27L-200PB Datasheet PDF - NXP Semiconductors.

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BLF7G27L-200PB Datasheet PDF : BLF7G27L-200PB pdf     
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General description
200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz.

Features and benefits
■ Excellent ruggedness
■ High efficiency
■ Low Rth providing excellent thermal stability
■ Designed for low memory effects providing excellent pre-distortability
■ Internally matched for ease of use
■ Integrated ESD protection
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

■ RF power amplifiers for W-CDMA base stations and multi carrier applications in the
   2600 MHz to 2700 MHz frequency range


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