datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga
HOME  >>>  Fairchild  >>> FQA10N80 PDF

FQA10N80 Datasheet PDF - Fairchild Semiconductor

Número de pieza
componentes Descripción
Fabricante
FQA10N80
Fairchild
Fairchild Semiconductor Fairchild
Other PDF
  2006   lastest PDF  
PDF
FQA10N80 Datasheet PDF : FQA10N80 pdf     
FQA10N80_F109 image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 9.8A, 800V, RDS(on) = 1.05Ω @VGS = 10 V
• Low gate charge ( typical 55 nC)
• Low Crss ( typical 24 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Page Link's: 1  2  3  4  5  6  7  8 
 

Share Link: 

English 한국어 简体中文 日本語 русский

All Rights Reserved© datasheetbank.com [ Política De Privacidad ]